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UPA801T Datasheet, PDF (5/8 Pages) California Eastern Labs – NPN SILICON HIGH FREQUENCY
fT – IC Characteristics
20
VCE = 3 V
f = 1.0 GHZ
10
5
2
1
0.5 1
5 10
50
Collector Current IC (mA)
NF – IC Characteristics
6
VCE = 3 V
f = 1 GHZ
4
2
0
0.5 1.0
5.0 10
50 100
Collector Current IC (mA)
Cre – VCB Characteristics
5.0
f = 1 MHZ
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
µPA801T
l S21e l 2– IC Characteristics
15
VCE = 3 V
f = 1.0 GHZ
10
5
00.5 1
5 10
50 100
Collector Current IC (mA)
24
20
16
12
8
4
0
0.1
l S21e l 2– f Characteristics
VCE = 3V
IC = 7 mA
0.2
0.5 1.0 2.0
5.0
Frequency f (GHZ)
3