UPA1912 Datasheet, PDF (5/10 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µPA1912
TYPICAL CHARCTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120
150
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−20
VGS = −4.5 V
−16
VGS = −4.0 V
−12
VGS = −2.5 V
−8
−4
0
−0.2 −0.4 −0.6 −0.8 −1.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−1.5
VDS = −10 V
ID = −1 mA
−1.0
−0.5
−50
0
50
100
150
Tch - Channel Temperature - ˚C
!
FORWARD BIAS SAFE OPERATING AREA
−100
−10
−1
R^D_(V^S(GonS)
=Li^{−m4i.t5edV)}
ID(DC)
Single Pulse
Mounted on 250mm² x 35µm copper
pad connected to drain electrode in
50mm x 50mm x 1.6mm FR-4 board.
ID(pulse)
P_{W =}
P_W^P=W_5=s1P0^W_0=m1s0 ^ms
1
ms
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
FORWARD TRANSFER CHARACTERISTICS
−100
VDS = −10 V
−10
−1 ^{TA = 125˚C}
75˚C
−0.1
−0.01
TA = 25˚C
−25˚C
−0.001
−0.0001
−0.00001
0
−1.0
−2.0
VGS - Gate to Source Voltage - V
−3.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = −10 V}
10
TA = −25˚C
25˚C
75˚C
125˚C
1
0.1
0.01
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
Data Sheet D13806EJ3V0DS
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