TBB1012_15 Datasheet, PDF (5/15 Pages) Renesas Technology Corp – Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

TBB1012
200 MHz Power Gain, Noise Figure Test Circuit
V_T
1000 p
V_G2
1000 p
Preliminary
V_T
1000 p
Input (50 Ω)
1000 p
47 k
L1
36 p
47 k
1000 p
FET2
1000 p
1SV70
R1
1000 p
V _G1
47 k
L2
1000 p
Output (50 Ω)
10 p max
RFC
1SV70
1000 p
V_D
Unit : Resistance (Ω)
Capacitance (F)
R1 : 82 kΩ
L1 : φ1 mm Enameled Copper Wire, Inside dia 10 mm, 2 Turns
L2 : φ1 mm Enameled Copper Wire, Inside dia 10 mm, 2 Turns
RFC : φ1 mm Enameled Copper Wire, Inside dia 5 mm, 2 Turns
R07DS0317EJ0400 Rev.4.00
Jan 10, 2014
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