RQK0202RGDQA Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQK0202RGDQA
Dynamic Input Characteristics
40
16
V_GS
30
12
20 ^{VDD = 20 V}
10 V
5V
10
V_DS
0
0
2
4
5V ₈
10 V
V_DD = 20 V
4
I_D = 3.8 A
Tc = 25°C
0
6
8
10
Gate Charge Qg (nc)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0
5
10
15
20
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
12
10 V
Pulse Test
Tc = 25°C
5V
8
4
–5, –10 V
0
VGS = 0 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Switching Characteristics
1000
100
V_DD = 10 V
V_GS = 4.5 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
tr
td(off)
td(on)
10
tf
1
0.1
1
10
100
Drain Current I_D (A)
Input Capacitance vs.
Gate to Source Voltage
600
550
500
450
400
VDS = 0 V
f = 1 MHz
350
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage V_GS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.6
VGS = 0
0.5
0.4
ID = 10 mA
0.3
0.2
1 mA
0.1
25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 12, 2006 page 5 of 6