RQJ0302NGDQA Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0302NGDQA
Dynamic Input Characteristics
0
0
V_DS
–20
V_DD = –10 V
–40 _{–25 V}
V_DD = –25 V
-4
–10 V
-8
–60
V_GS
–80 _{ID = –2.2 A}
Tc = 25°C
–100
01 234 5
Gate Charge Qg (nC)
-12
-16
-20
6
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
Crss
10
0
–10
–20
–30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–1.0
–0.8
VGS = –10 V
–5 V
Pulse Test
Tc = 25°C
–0.6
–0.4
–0.2
VGS = 0 V, 5 V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Switching Characteristics
1000
100 ^tf
td(on)
td(off)
V_DD = –10 V
V_GS = –10 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
10 _tr
1
–0.01
–0.1
–1
–10
Drain Current I_D (A)
Input Capacitance vs.
Gate to Source Voltage
360
VDS = 0 V
f = 1 MHz
320
280
240
200
–10
–5
0
5
10
Gate to Source Voltage V_GS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.8
–0.7
VGS = 0
–0.6
–0.5
ID = –10 mA
–0.4
–1 mA
–0.3
–0.2
25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.4.00, May 26, 2006, page 5 of 6