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RJK6024DPE_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – 600V - 0.4A - MOS FET High Speed Power Switching
RJK6024DPE
10
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
Preliminary
D=1
1
0.5
0.2
0.1
0.05
0.1
1 shot pulse
0.02 0.01
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10μ
100μ
1m
10m
100m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
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