RJK1526DPJ Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK1526DPJ, RJK1526DPE, RJK1526DPF
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V _DD
= 75 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
90%
td(off)
10%
tf
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
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