RJK1008DPE_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – N-Channel Power MOSFET High-Speed Switching Use

RJK1008DPE
Main Characteristics
Power vs. Temperature Derating
150
125
100
70
50
25
0
50
100
150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
80
7V
4.4 V
60
40
V_GS = 4.0 V
20
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source on State Resistance vs.
Gate to Source Voltage
20
Pulse Test
15
10 A
10
40 A
I_D = 80 A
5
0
5
10
15
20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
1000
Ta = 25°C
100
100
10
µ_s
µ_s
10
DC Operation
(Tc = 25°C)
1
PW = 10 ms
(1shot)
0.1 _{Operation in this}
area is limited by
0.01 ^RDS(on)
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
Pulse Test
80
60
40
Tc = 75°C
20
25°C
−25°C
0 _{123 456 7}
Gate to Source Voltage V_GS (V)
Drain to Source on State Resistance
vs. Drain Current
100
V_GS = 10 V
Pulse Test
10
1
1
10
100
Drain Current I_D (A)
REJ03G1629-0100 Rev.1.00 Apr 03, 2008
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