RJK0701DPN-E0_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – N-Channel MOS FET 75 V, 100 A, 3.8 m

RJK0701DPN-E0
10.0
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
3
1 ^D=1
0.5
0.3 _0.2
0.1
0.1 ^0.05
0.02
0.01
0.03
1shot pulse
0.01
100 μ
1m
θch – c(t) = γs (t) • θch – c
θch – c = 0.63°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
25 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DD
= 30 V
Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
R07DS0622EJ0200 Rev.2.00
Aug 24, 2012
Page 5 of 6