RJK0629DPN_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use

RJK0629DPN
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
Vin
15 V
1 ^D=1
0.5
0.2
0.1
0.1 _0.05
0.01
0.02
1shot ^pulse
0.01
10 μ
100 μ
1m
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
P_DM
D
=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
V_DS
Monitor
Rg
L
I_AP
Monitor
D. U. T
V_DD
50 Ω
Avalanche Waveform
E_AS = ¹ L • I_AP2 •
2
V_DSS
V_{DSS –} V_DD
I_AP
I_D
V _(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 30 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
R07DS1062EJ0200 Rev.2.00
Apr 09, 2013
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