RJH1CM5DPQ-E0_13 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – 1200V - 15A - IGBT Application: Inverter

RJH1CM5DPQ-E0
Switching Characteristics (Typical) (1)
1000
tf
100
td(off)
td(on)
10
tr
V_CC = 600 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
tf
100
td(off)
td(on)
tr
10
V_CC = 600 V, V_GE = 15 V
1 ^{IC = 15 A, Tc = 150°C}
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
tf
100
td(off)
td(on)
tr
10
V_CC = 600 V, V_GE = 15 V
1 ^{IC = 15 A, Rg = 5 Ω}
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100
V_CC = 600 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
10
Eon
1
Eoff
0.1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
100
V_CC = 600 V, V_GE = 15 V
I_C = 15 A, Tc = 150°C
10
Eon
1
Eoff
0.1
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
100
V_CC = 600 V, V_GE = 15 V
I_C = 15 A, Rg = 5 Ω
10
Eon
1
Eoff
0.1
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS0520EJ0700 Rev.7.00
Jul 2, 2013
Page 5 of 9