RJF0611JPE_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0611JPE
Target Specifications
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8
6
24 V
V_DD = 16 V
4
2
0
10
100
1000
10000
Shutdown Time of Load-Short Test Pw (μS)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = 0.5 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3 _0.2
0.1
0.1
0.05
0.02
0.01
0.03 1shot pulse
0.01
100 μ
1m
10 m
θch - c(t) = γs (t) • θch - c
θch - c = 2.5°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
100 m
1
10
Pulse Width PW (S)
R07DS0582EJ0200 Rev.2.00
Apr 13, 2012
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