RJF0604JPD_12 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0604JPD
Target Specifications
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
V_DD = 16 V
8
6
24 V
4
2
0
100 μ
1m
10 m
100 m
Shutdown Time of Load-Short Test Pw (S)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = 0.5 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03 _0.02
0.01
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS0583EJ0200 Rev.2.00
Apr 13, 2012
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