R2J20655NP Datasheet, PDF (5/18 Pages) Renesas Technology Corp – Integrated Driver - MOS FET (DrMOS)

R2J20655NP
Recommended Operating Condition
Item
Input voltage
Supply voltage &
Drive voltage
Symbol
VIN
VCIN
Rating
4.5 to 22
4.5 to 5.5
or
8 to 22
Preliminary
Units
V
V
Note
When the usage of VCIN = 4.5 V to 5.5 V,
VCIN should be connected to Reg5V
(Refer to "Pin Connection")
Electrical Characteristics
(Ta = 25°C, VCIN = 12 V, VSWH = 0 V, unless otherwise specified)
Item
Symbol Min Typ Max Units
Test Conditions
Supply
VCIN start threshold
VCIN shutdown threshold
UVLO hysteresis
VCIN operating current
V_H
V_L
dUVL
I_CIN
7.0
7.4
7.8
V
6.6
7.0
7.4
V
—
0.4
—
V V_H – V_L
—
49
—
mA f_PWM = 1 MHz,
Ton_pwm = 120 ns
VCIN disable current
I_CIN-DISBL
—
—
800 A DISBL# = 0 V,
PWM = LSDBL# = Open
PWM
PWM input high level
V_H-PWM
2.6
—
—
V 3.3 V/5.0 V PWM interface
input
PWM input low level
V_L-PWM
—
—
0.8
V
PWM input resistance
R_IN-PWM
6.5 12.5 25
k PWM = 1 V
PWM input tri-state range V_IN-tri
1.4
—
2.0
V 3.3 V/5.0 V PWM interface
Shutdown hold-off time
t_HOLD-OFF *¹
—
150
—
ns
DISBL# Enable level
V_ENBL
2.0
—
—
V
input
Disable level
V_DISBL
—
—
0.8
V
Input current
THDN on resistance
I_DISBL
R_THDN *¹
—
2.0
5.0
A DISBL# = 1 V
0.2
0.5
1.0
k DISBL# = 0.2 V
LSDBL# Low-side activation level
V_LSDBLH
2.0
—
—
V
input
Low-side disable level
V_LSDBLL
—
—
0.8
V
Thermal
warning
Input current
Warning temperature
Temperature hysteresis
THWN on resistance
I_LSDBL
T_THWN *¹
T_HYS *¹
R_THWN *¹
–52 –26 –12 A LSDBL# = 1 V
100 115 130 °C Driver IC temperature
—
15
—
°C
0.2
0.5
1.0
k THWN = 0.2 V
Thermal
THWN leakage current
Shutdown temperature
I_LEAK
Tstdn *¹
—
—
1.0
A THWN = 5 V
130 150
—
°C Driver IC temperature
shutdown
5V
Output voltage
regulator _{Line regulation}
Vreg
4.95
5.2
5.45
V
Vreg-line
–10
0
10
mV VCIN = 12 V to 16 V
Load regulation
Vreg-load –10
0
10
mV Ireg = 0 to 10 mA
Note: 1. Reference values for design. Not 100% tested in production.
R07DS0200EJ0100 Rev.1.00
Jan 25, 2011
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