R1LV0416C-I Datasheet, PDF (5/18 Pages) Renesas Technology Corp – Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)

R1LV0416C-I Series
Operation Table
CS1# CS2 WE# OE# UB# LB# I/O0 to I/O7
H
×
×
×
×
×
High-Z
×
L
×
×
×
×
High-Z
×
×
×
×
H
H
High-Z
L
H
H
L
L
L
Dout
L
H
H
L
H
L
Dout
L
H
H
L
L
H
High-Z
L
H
L
×
L
L
Din
L
H
L
×
H
L
Din
L
H
L
×
L
H
High-Z
L
H
H
H
×
×
High-Z
Note: H: V_IH, L: V_IL, ×: V_IH or V_IL
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to V_SS
Terminal voltage on any pin relative to V_SS
Power dissipation
Operating temperature
V_CC
V_T
P_T
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Notes: 1. V_T min: −3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Value
Unit
−0.5 to +4.6
V
−0.5*¹ to V_CC + 0.3*²
V
0.7
W
−40 to +85
°C
−65 to +150
°C
−40 to +85
°C
DC Operating Conditions
(Ta = −40 to +85°C)
Parameter
Symbol Min
Supply voltage
V_CC
2.2
V_SS
0
Input high voltage V_CC = 2.2 V to 2.7 V V_IH
2.0
V_CC = 2.7 V to 3.6 V V_IH
2.2
Input low voltage V_CC = 2.2 V to 2.7 V V_IL
−0.2
V_CC = 2.7 V to 3.6 V V_IL
−0.3
Note: 1. V_IL min: −3.0 V for pulse half-width ≤ 30 ns.
Typ
2.5/3.0
0




Max
Unit
3.6
V
0
V
V_CC + 0.3 V
V_CC + 0.3 V
0.4
V
0.6
V
Note
1
1
Rev.2.00, May.26.2004, page 5 of 16