 English |
|
|
|
|
|
|
|
| R1EX25002ASA00A_15 Datasheet, PDF (5/24 Pages) Renesas Technology Corp – Serial Peripheral Interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) Electrically Erasable and Programmable Read Only Memory | |||
| |||
| ◁ |
R1EX25002Axx00A/R1EX25004Axx00A
Block Diagram
VCC
VSS
S
W
C
HOLD
D
Q
High voltage generator
Memory array
Y-select & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*1
VCC
â0.6 to + 7.0
V
VIN
â0.5*2 to +7.0*3
V
Topr
â40 to +85
°C
Storage temperature range
Tstg
â55 to +125
°C
Notes: 1. Including electrical characteristics and data retention.
2. VIN (min): â3.0 V for pulse width ⤠50 ns.
3. Should not exceed VCC + 1.0 V.
DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
VCC
1.8
VSS
0
Input voltage
VIH
VCC Ã 0.7
VIL
â0.3*1
Operating temperature range
Topr
â40
Notes: 1. VIN (min): â1.0 V for pulse width ⤠50 ns.
2. VIN (max): VCC + 1.0 V for pulse width ⤠50 ns.
Capacitance (Ta = +25°C, f = 1 MHz)
Typ
Max
Unit

5.5
V
0
0
V

VCC + 0.5*2
V

VCC Ã 0.3
V

+85
°C
Parameter
Input capacitance (D,C, S, W ,HOLD)
Output capacitance (Q)
Note: 1. Not 100% tested.
Symbol Min
Cin*1

CI/O*1

Typ


Max
6.0
8.0
Memory cell characteristics (VCC = 1.8 V to 5.5 V)
Endurance
Data retention
Notes: 1. Not 100% tested.
Ta=25°C
Ta=85°C
1,000k Cycles min. 100k Cycles min
100 Years min.
10 Years min.
Unit
pF
pF
Test
conditions
Vin = 0 V
Vout = 0 V
Notes
1
1
REJ03C0357-0002 Rev. 0.02 Jan.14 .2009
page 3 of 20
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese