PA677TB_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0
25
50
75
100 125 150 175
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.4
Pulsed
1.2
VGS = 4.5 V
4.0 V
1
2.5 V
0.8
0.6
0.4
0.2
0
0
0.4
0.8
1.2
1.6
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.4
VDS = 10 V
ID = 1.0 mA
1.2
1
0.8
0.6
0.4
- 50
0
50
100
150
Tch - Channel Temperature - °C
µPA677TB
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.24
Mounted on FR-4 Board of
2500 mm² x 1.1 mm
0.2
2units total
0.16
0.12
0.08
0.04
0
0
25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD TRANSFER CHARACTERISTICS
10
VDS = 10 V
Pulsed
1
0.1
0.01
0.001
TA = 125°C
75°C
25°C
−25°C
0.0001
0
0.5
1
1.5
2
2.5
3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
TA= −25°C
25°C
1
75°C
125°C
0.1
0.01
0.001
0.01
0.1
1
10
ID - Drain Current - A
Data Sheet G16598EJ1V0DS
3