PA2717AGR_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

μ PA2717AGR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic substrate of
2.4
1200 mm² x 2.2 mm
2
1.6
1.2
0.8
0.4
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
- 1000
- 100
- 10
RDS(on) Limited
(at VGS = −10 V)
ID(DC)
ID(pulse)
DC
PW = 100 μs
1 ms
-1
- 0.1
- 0.01
Power Dissipation Limited
10 ms
100 ms
TA = 25°C
Single pulse
Mounted on ceramic substrate of
1200 mm² x 2.2 mm
- 0.01
- 0.1
-1
- 10
- 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
TA = 25°C, Single pulse
Rth(ch-A)1: Mounted on ceramic substrate of 1200 mm² x 2.2 mm
Rth(ch-A)2: Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
Rth(ch-A)2
Rth(ch-A)1
10
1
0.1
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet G19279EJ1V0DS
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