PA1855_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA1855
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120
150
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
VGS = 4.5 V
VGS = 4.0 V
20
VGS = 2.5 V
15
10
5
0
0
0.2
0.4
0.6
0.8 1.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5 _{VDS = 10 V}
ID = 1 mA
1.0
0.5
− 50
0
50
100
150
Tch - Channel Temperature - ˚C
5
FORWARD BIAS SAFE OPERATING AREA
100
10
1
R(^D_@^S(o_V^{n)GLSim= i4te.5d}
ID
V) _ID
(DC)
(pulse)
PW
DC
=
PW
100
PW
= ₁₀
ms
= _{1 ms}
ms
0.1
Single Pulse
Mounted on Ceramic
Board of 50cm²x 1.1mm
0.01 ^{PD(FET1) : PD(FET2) = 1:1}
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
100 _{VDS = 10 V}
10
1
0.1
0.01
0.001
0.0001
TA = 125˚C
TA = 75˚C
TA = 25˚C
TA = -25˚C
0.00001
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
100
VDS = 10 V
10
TA = -25 ˚C
TA = 25 ˚C
1
TA = 75 ˚C
TA = 125 ˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Data Sheet D13454EJ2V0DS
3