PA1763_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

µPA1763
TYPICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
FORWARD TRANSFER CHARACTERISTICS
100 _Pulsed
VDS = 10 V
10
TA = 150 ˚C
1
TA = 75 ˚C
TA = 25 ˚C
0.1
TA = −25 ˚C
0.01
0.001
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
30
25
20
VGS = 10 V
VGS = 4.5 V
15
VGS = 4.0 V
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
TA = −25 ˚C
10
TA = 25 ˚C
TA = 75 ˚C
TA = 150 ˚C
1
0.1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
180
160
140
120
100
80
60
ID = 4.5 A
40
20
ID = 2.3 A
0
0
5
10
15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
Pulsed
100
VGS = 4.0 V
80
60
40
20
0
0.1
VGS = 4.5 V
VGS = 10 V
1
10
ID - Drain Current - A
ID = 2.3 A
100
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS =10 V
ID = 1 mA
2.5
2
1.5
1
0.5
0
− 75 − 50 − 25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - ˚C
Data Sheet G14056EJ2V0DS
3