NR8360JP-BC_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – φ 30 μm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC

NR8360JP-BC
ORDERING INFORMATION
Part Number
NR8360JP-BC
Available Connector
With FC-UPC Connector
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Forward Current
Reverse Current
IF
10
mA
IR
500
μA
Operating Case Temperature
TC
–20 to +55
°C
Storage Temperature
Tstg
–40 to +85
°C
Lead Soldering Temperature
Tsld
260 (10 sec.)
°C
Cooler Current
IC
1.0
A
Cooler Voltage
VC
2.0
V
ELECTRO-OPTICAL CHARACTERISTICS (TAPD = 25°C, TC = –20 to +55°C, unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
Quantum Efficiency
Sensitivity
Multiplication Factor
Excess Noise Factor^*2
Symbol
VBR ID = 100 μA
δ^*1
Conditions
ID
VR = VBR × 0.9
VR = VBR × 0.9, TC = 55°C, IC = 0.8 A
IDM M = 2 to 10
Ct
VR = VBR × 0.9, f = 1 MHz
fC
M = 10
M = 20
η
λ = 1 310 nm
λ = 1 550 nm
S
λ = 1 310 nm
λ = 1 550 nm
M
λ = 1 310 nm, Iop = 1.0 μA,
VR = V (@ ID = 1 μA)
x
λ = 1 310 nm, 1 550 nm, Iop = 1.0 μA,
F
M = 10, f = 35 MHz, B = 1 MHz
*1 δ =
VBR (25°C + ΔT°C) – VBR (25°C)
ΔT°C · VBR (25°C)
*2 F = M^X
MIN.
50
TYP.
70
0.2
MAX.
100
Unit
V
%/°C
5
10
nA
2
5
0.2
2.0
nA
1.0
1.7
pF
1.0
GHz
1.2
70
85
%
65
80
0.73 0.89
A/W
1.00
20
40
0.7
5
Data Sheet PL10724EJ01V0DS
3