NP90N04MUG_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP90N04MUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
100
10
ID(DC)
DC
RDS(on) Limited
(VGS = 10 V)
PW
= _{1i 00 μs}
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage – V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 0.69°C/Wi
0.1
0.01
100 μ
1m
10 m 100 m
1
Single pulse
10
100
1000
PW - Pulse Width - s
Data Sheet D18665EJ2V0DS
3