NP80N055ELE_15 Datasheet, PDF (5/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage
IGSS
VGS(th)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 40 A
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
RDS(on)2
VGS = 5 V, ID = 40 A
RDS(on)3
VGS = 4.5 V, ID = 40 A
Input Capacitance
Ciss
VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 40 A,
Rise Time
tr
VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 1 Ω
Fall Time
tf
Total Gate Charge
QG1
VDD = 44 V, VGS = 10 V, ID = 80 A
QG2
VDD = 44 V,
Gate to Source Charge
QGS
VGS = 5 V,
Gate to Drain Charge
QGD
ID = 80 A
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V,
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±10 μA
1.5 2.0 2.5 V
15 40
S
8.4 11 mΩ
10.3 13 mΩ
11.3 15 mΩ
2900 4400 pF
380 570 pF
170 310 pF
22 48 ns
10 25 ns
62 120 ns
11 27 ns
50 75 nC
26 39 nC
12
nC
15
nC
1.0
V
50
ns
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
Data Sheet D14097EJ6V0DS
3