NP55N03SUG_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP55N03SUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
100
10
ID(DC)
DC
RDS(on) Limited
VGS = 10 V
PW
= _{1i 00 μs}
80
70
60
50
40
30
20
10
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/Wi
100
10
1
Rth(ch-C) = 1.95°C/Wi
0.1
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single pulse
100
1000
Data Sheet D18320EJ2V0DS
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