NP35N055YUK_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 55 V – 35 A – N-channel Power MOS FET Application: Automotive

NP35N055YUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
10
8
6
4
2
0
–100 –50 0
V_GS = 10 V
I_D = 18 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
V_DD = 28 V
V_GS = 10 V
R_G = 0 Ω
td(off)
td(on)
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
V_GS = 10 V
V_GS = 0 V
100
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
V_F(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
Crss
V_GS = 0 V
f = 1 MHz
10
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
45
VDD = 44 V
9
40
28 V
11 V
8
35
7
30
V_GS
6
25
5
20
4
15
3
10
2
5
V_DS
I_D = 35 A 1
0
0
0 5 10 15 20 25 30 35 40
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
V_GS = 0 V
1
0.1
1
10
100
I_F - Drain Current - A
R07DS1002EJ0100 Rev.1.00
Feb 08, 2013
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