NP180N055TUK Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP180N055TUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3
2
1
0
–100 –50 0
V_GS = 10 V
I_D = 90 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
10000
SWITCHING CHARACTERISTICS
1000
100
td(off)
td(on)
tr
tf
10 _{VDD = 28 V}
V_GS = 10 V
R_G = 0 Ω
1
0.1
1
10
100
1000
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V_GS = 10 V
V_GS = 0 V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
V_F(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
V_GS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
55
11
50
10
VDD = 44 V
45
28 V
9
11 V
40
8
35
7
30
V_GS
6
25
5
20
4
15
3
10
2
5
V_DS
I_D = 180 A 1
0
0
0 20 40 60 80 100 120 140 160 180 200
Q_G- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
V_GS = 0 V
1
0.1
1
10
100
1000
I_F - Drain Current - A
R07DS0593EJ0100 Rev.1.00
Dec 12, 2011
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