NP180N04TUJ Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP180N04TUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
VGS = 10 V
ID = 90 A
3.0
2.0
1.0
Pulsed
0.0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
td(off)
td(on)
tr
tf
10
100
1000
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
Ciss
10000
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
16
VDD = 32 V
20 V
8V
14
12
VGS
10
8
6
4
VDS
ID = 180 A ²
0
20 40 60 80 100 120 140 160
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
1000
I_F - Drain Current - A
R07DS0180EJ0100 Rev.1.00
Dec 17, 2010
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