NP15P06SLG_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

NP15P06SLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
-100
-10
-1
R^DS(on)
(V ^GS
=Li^{−m1ii0teVd )}
ID(DC)
DC
ID(pulse)
PW
= _{1i 00 μs}
-0.1
-0.01
TC = 25°C
Single Pulse
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/Wi
100
10
Rth(ch-C) = 5.0°C/Wi
1
0.1
0.01
100 μ
Single Pulse
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet D19078EJ2V0DS
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