NP110N04PUK_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP110N04PUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3
2
1
0
–100 –50 0
V_GS = 10 V
I_D = 55 A
Pulsed
50 100 150 200
T_ch - Channel Temperature - °C
10000
SWITCHING CHARACTERISTICS
1000
100
td(off)
td(on)
tr
tf
10 _{VDD = 20 V}
V_GS = 10 V
R_G = 0 Ω
1
0.1
1
10
100
1000
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
V_GS = 10 V
V_GS = 0 V
100
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
V_F(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
V_GS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
30
VDD = 32 V
12
20 V
8V
25
10
20
8
V_GS
15
6
10
4
5
2
V_DS
I_D = 110 A
0
0
0 20 40 60 80 100 120 140 160 180 200
Q_G- Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 100 A/μs
V_GS = 0 V
1
10
100
1000
I_F - Drain Current - A
R07DS0570EJ0100 Rev.1.00
Nov 17, 2011
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