NP109N04PUK Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP109N04PUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
3
2
1
VGS = 10 V
ID = 55 A
Pulsed
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
30
25
20
15
10
5
0
0
14
VDD = 32 V
12
20 V
8V
10
8
VGS
6
4
VDS
ID = 110 A ₂
0
20 40 60 80 100 120 140
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1
10
100
I_F - Drain Current - A
1000
R07DS0544EJ0100 Rev.1.00
Sep 23, 2011
Page 5 of 6