NP100N04PUK Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP100N04PUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
2
VGS = 10 V
1
ID = 50 A
Pulsed
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(of f )
td( on)
tr
tf
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
0V
100
10
1
0.1
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Cr ss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
VDD = 32 V
30
20 V
12
25
8V
10
20
8
VGS
15
6
10
4
5
VDS
2
ID = 100 A
0
0
0 10 20 30 40 50 60 70 80 90
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0545EJ0100 Rev.1.00
Sep 23, 2011
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