N0604N_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – N-channel MOSFET 60 V, 82 A, 6.5 mΩ

N0604N
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
12
10
8
6
4
Pulsed
V_GS = 10 V
2
I_D = 41 A
0
-50
0
50
100
150
T_ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
10
V_DD = 30 V
V_GS =10 V
R_G = 0 Ω
1
0.1
1
t_d(off)
t_d(on)
t_r
t_f
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
1
V_GS = 10 V
0V
0.1
0.01
0
Pulsed
0.4
0.8
1.2
1.6
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
C_iss
C_oss
V_GS = 0 V
f = 1 MHz
100
0.01
0.1
C_rss
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
10
8
V_DD = 12 V
30 V
48 V
6
4
2
0
0
100
I_D = 82 A
20
40
60
80
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
1
0.1
V_GS = 0 V
di/dt = 100 A/μ s
1
10
100
I_F - Diode Forward Current - A
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 5 of 6