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M5M5256DFP-70LLIBM Datasheet, PDF (5/10 Pages) Renesas Technology Corp – 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
RENESAS LSIs
M5M5256DFP,VP-55LL,-70LL,-70LLI,
-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
VO
Output voltage
Pd
Power dissipation
T opr
Operating temperature
T stg
Storage temperature
* -3.0V in case of AC ( Pulse width <_ 30ns )
Conditions
With respect to GND
Ta=25°C
-LL,-XL
-LLI
Ratings
-0.3*~7.0
-0.3*~Vcc+0.3
(Max 7.0)
0~Vcc
700
0~70
-40~85
-65~150
DC ELECTRICAL CHARACTERISTICS ( Vcc=5V±10%, unless otherwise noted)
Symbol
Parameter
Test conditions
VIH
VIL
VOH1
VOH2
VOL
II
IO
High-level input voltage
Low-level input voltage
High-level output voltage 1 IOH=-1mA
High-level output voltage 2 IOH=-0.1mA
Low-level output voltage IOL=2mA
Input current
VI=0~Vcc
Output current in off-state /S=VIH or or /OE=VIH, VI/O=0~Vcc
Limits
Min Typ
2.2
-0.3*
2.4
Vcc
-0.5
Max
Vcc
+0.3
0.8
0.4
±1
±1
Icc1
Active supply current
(AC, MOS lev el )
/S<_0.2V,
55ns
Other inputs<0.2V or >Vcc-0.2V 70ns
Output-open
1MHz
30 45
25 40
2
4
Icc2
Active supply current
(AC, TTL lev el )
/S=VIL,
other inputs=VIH or VIL
Output-open
55ns
70ns
1MHz
30 50
25 45
4
8
-LL,-LLI
~25°C
-XL
2
0.1 0.4
-LL,-LLI
6
Icc3 Stand-by current
/S_>Vcc-0.2V,
~40°C
-XL
1.2
other inputs=0~Vcc
-LL,-LLI
20
~70°C
-XL
5
~85°C -LLI
40
Icc4 Stand-by current
/S=VIH,other inputs=0~Vcc
3
* -3.0V in case of AC ( Pulse width <_ 30ns )
CAPACITANCE ( Vcc=5V±10%, unless otherwise noted)
Symbol
Parameter
Test conditions
CI
Input capacitance
VI=GND, VI=25mVrms, f=1MHz
CO
Output capacitance
VO=GND,VO=25mVrms, f=1MHz
Note 0: Direction f or current f lowing into an IC is positiv e (no mark).
1: Ty pical v alue is one at Ta = 25°C.
2: CI, CO are periodically sampled and are not 100% tested.
Limits
Min Typ Max
6
8
Unit
V
V
V
mW
°C
°C
Unit
V
V
V
V
V
µA
µA
mA
mA
µA
mA
Unit
pF
pF
3