HITK0303MP Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HITK0303MP
Dynamic Input Characteristics
100
20
I_D = 3.7 A
Tc = 25°C
80
16
60
40
V_DS
20
0
0
2
V_DD =10 V
12
25 V
V_GS 8
4
V_DD = 25 V
10 V
0
4
6
8
10
Gate Charge Qg (nC)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
V_GS = 0 V
f = 1 MHz
Crss
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
5
4
V_GS = 10 V
Pulse Test
Tc = 25°C
3
5V
0 V, –5 V, –10 V
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
1000
Switching Characteristics
tf
100
td(off)
td(on)
10 _tr
1
0.01
0.1
V_DD = 10 V
V_GS = 10 V
Rg = 4.7 Ω
P_W = 5 μs
Tc = 25°C
1
10
Drain Current I_D (A)
Input Capacitance vs.
Gate to Source Voltage
800
750
700
650
600
–10
–5
V_DS = 0 V
f = 1 MHz
0
5
10
Gate to Source Voltage V_GS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.9
V_GS = 0
0.8
0.7
I_D = 10 mA
0.6
0.5
1 mA
0.4
0.3
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
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