HITK0203MP_12 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HITK0203MP
Dynamic Input Characteristics
40
16
V_GS
30
12
20 ^VDD ^{= 20 V}
10 V
5V
10
V_DS
0
0123
5V
10 V
8
V_DD = 20 V
4
I_D = 2.9 A
Tc = 25°C
0
456
Gate Charge Qg (nc)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
10
VGS = 0 V
f = 1 MHz
1
0
5
10
15
20
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
10 V
Tc = 25°C
8
5V
6
4
2
–5, –10 V
0
VGS = 0 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Switching Characteristics
1000
V_DD = 10 V
tr
V_GS = 4.5 V
Rg = 4.7 Ω
PW = 5 μs
100 ^{Tc = 25°C}
td(off)
td(on)
10
tf
1
0.1
1
10
Drain Current I_D (A)
Input Capacitance vs.
Gate to Source Voltage
320
300
280
260
240
220
VDS = 0 V
f = 1 MHz
200
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage V_GS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.6
VGS = 0
0.5
0.4
ID = 10 mA
0.3
1 mA
0.2
0.1
25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0481EJ0200 Rev.2.00
May 09, 2012
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