HAT2172H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2172H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
40
4.4 V
30
20
Pulse Test
4.0 V
3.8 V
3.6 V
3.4 V
10
V_GS = 3.0 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
I_D = 20 A
100
10 A
50
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.5.00 Sep 20, 2005 page 3 of 7
Maximum Safe Operation Area
500
100
10
1
DC
PW ₌
Operation _Tc
1 _ms1001µ^0sµs
10 _ms
= _{25 °C}
Operation in
this area is
0.1 ^{limited by RDS(on)}
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20 Tc = 75°C
10
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
50
20
10 V_GS = 7 V
5
10 V
2
Pulse Test
1
1 0.3 10 3 100 30 1000
Drain Current I_D (A)