HAT2170H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2170H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
4V
40
3.6 V
3.4 V
30
20
3.2 V
10
V_GS = 3.0 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200
I_D = 50 A
100
20 A
10 A
0
4
8
12
16 20
Gate to Source Voltage V_GS (V)
Rev.5.00, Sep 26, 2005, page 3 of 7
Maximum Safe Operation Area
500
100
10
DC^P_O^W_pe⁼_{rat1io01nmmss} ^{10010µsµs}
1 ^{Operation in}
this area is
limited by R_DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
0
2
25°C
–25°C
4
6
8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = 7 V
3
10 V
1
0.3
0.1
1 3 10 30 100 300 1000
Drain Current I_D (A)