HAT2169H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2169H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V Pulse Test
4.5 V
80
3.8 V
60
3.6 V
3.4 V
3.2 V
40
V_GS = 3.0 V
20
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
I_D = 50 A
100
50
20 A
10 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.4.00 Sep 20, 2005 page 3 of 7
500 ^{Maximum Safe Operation Area}
100
10
DCPOWp=er1a0t1iommnss ^{10010µsµs}
1 _{Operation in}
this area is
limited by R_DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1
3
10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
Pulse Test
80
60
Tc = 75°C
40
20
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = 4.5 V
3
10 V
1
0.3
0.1
1 3 10 30 100 300 1000
Drain Current I_D (A)