HAT2064R Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

HAT2064R
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
5V
Pulse Test
30
V_GS = 0
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D=
PW
T
PW
T
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Vin
Vout
10%
10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.9.00 Sep 07, 2005 page 5 of 6