HAT2036R_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2036R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Rev.6.00 Sep 07, 2005 page 3 of 4