HAT1016R_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1016R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10 V –8 V
–20
–6 V
–4.5 V
Pulse Test
–16
–5 V
–4 V
–12
–3.5 V
–8
–3 V
–4
V_GS = –2 V
–2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
–0.2
I_D = –2 A
–0.1
–1 A
–0.5 A
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Rev.7.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–100
–30
10 µs 100 µs
–10
–3
–1
–0.3
OthpiseararetiaoDniCsinOperationP(WPW=
limited by R_{DS (on)}
1 _ms
10 _ms
≤ ₁^N₀^ote_s5₎
–0.1
Ta = 25°C
–0.03 1 shot pulse
1 Drive Operation
–0.01
–0.1 –0.3 –1 –3
–10 –30
–100
Drain to Source Voltage V_DS (V)
Note 5:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–20
V_DS = –10 V
Pulse Test
–16
–12
–8
–4
Tc = 75°C
–25°C
25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
V_GS = –4 V
–10 V
0.02
0.01
–0.2 –0.5 –1 –2
–5 –10 –20
Drain Current I_D (A)