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H7N0401LD Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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H7N0401LD, H7N0401LS, H7N0401LM
Reverse Drain Current vs.
Source to Drain Voltage
200
10 V
160
120
VGS = 0, â5 V
5V
80
40
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
800
IAP = 65 A
VDD = 25 V
640
duty < 0.1 %
Rg ⥠50 â¦
480
320
160
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03 0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch â c (t) = γ s (t) ⢠θch â c
θch â c = 1.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 â¦
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
⢠L ⢠IAP2 â¢
VDSS
VDSS â VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.5.00 Apr 07, 2006 page 5 of 8
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