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FY5AEJ-03_15 Datasheet, PDF (5/11 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET | |||
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PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI POWER MOSFET
FY5AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
N-ch
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 2A, VGS = 4V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50â¦
IS = 1.5A, VGS = 0V
Channel to ambiet
IS = 1.5A, dis/dt = â50A/µs
Limits
Unit
Min.
Typ.
Max.
30
â
â
V
â
â
±0.1 µA
â
â
0.1
mA
1.0
1.5
2.0
V
â
23
30
mâ¦
â
40
55
mâ¦
â
9
â
S
â
550
â
pF
â
220
â
pF
â
115
â
pF
â
12
â
ns
â
20
â
ns
â
40
â
ns
â
40
â
ns
â
0.75 1.10
V
â
â
78.1 °C/W
â
100
â
ns
P-ch
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = â30V, VGS = 0V
ID = â1mA, VDS = â10V
ID = â4A, VGS = â10V
ID = â2A, VGS = â4V
ID = â4A, VDS = â10V
VDS = â10V, VGS = 0V, f = 1MHz
VDD = â15V, ID = â2A, VGS = â10V, RGEN = RGS = 50â¦
IS = â1.5A, VGS = 0V
Channel to ambiet
IS =1.5A, dis/dt = 50A/µs
Min.
â30
â
â
â1.5
â
â
â
â
â
â
â
â
â
â
â
â
â
Limits
Typ.
â
â
â
â2.0
50
90
6
870
230
110
10
10
60
30
â0.88
â
100
Max.
â
±0.1
â0.1
â2.5
65
135
â
â
â
â
â
â
â
â
â1.20
73.5
â
Unit
V
µA
mA
V
mâ¦
mâ¦
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Aug. 1999
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