FS5ASH-06_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS5ASH-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 4V
ID = 2A, VGS = 2.5V
ID = 2A, VGS = 4V
ID = 2A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 2A, VGS = 4V, RGEN = RGS = 50Ω
IS = 2A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
60
—
—
—
—
±0.1
—
—
0.1
0.6
0.9
1.2
—
0.11 0.15
—
0.13 0.20
—
0.22
0.3
—
10
—
—
540
—
—
120
—
—
40
—
—
12
—
—
20
—
—
50
—
—
32
—
—
1.0
1.5
—
—
6.25
—
45
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
tw = 10ms
10¹
7
5
3
100ms
2
10⁰
1ms
7
5
10ms
3
DC
2
10^–1
7
5 _{TC = 25°C}
3 Single Pulse
2
2 3 5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
20 ^{PD = 20W VGS = 5V}
4V
3V
16
Tc = 25°C
Pulse Test
2.5V
12
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V 4V 3V 2.5V
Tc = 25°C
Pulse Test
8
2V
6
8
2V
4
1.5V
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
4
1.5V
2
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999