FS50SMJ-06_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS50SMJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 4V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
60
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
15
20
—
18
24
—
0.38 0.50
—
41
—
—
3000
—
—
580
—
—
300
—
—
22
—
—
65
—
—
250
—
—
160
—
—
1.0
1.5
—
—
1.79
—
70
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
tw = 10ms
10²
7
5
3
2
100ms
10¹
7
5
1ms
3
10ms
2
10⁰
7 TC = 25°C
5 _{Single Pulse}
100ms
DC
33 _{5 7100 2 3 5 7 101 2 3 5 7 102 2 3}
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
100
VGS = 10V
5V
TC = 25°C
Pulse Test
80
4V
60
40
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 10V
40
30
20
5V 4V
3.5V
PD = 70W
TC = 25°C
Pulse Test
3V
3V
20
PD = 70W
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
10
2.5V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999