FS50KMJ-2 Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS50KMJ-2
On-State Resistance vs.
Channel Temperature (Typical)
10¹
7 ^VGS ^{= 10V}
5 ^{ID = 25A}
4 ^{Pulse Test}
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
R_GEN
D.U.T.
Vout
Monitor
R_L
R_GS
V_DD
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
VDS = 10V
I_D = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
107²
5
3
2
107¹
5
3
2
107⁰
5
3
2
10^–₇¹
5
3
2
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2_{10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102}
Pulse Width tw (s)
Switching Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
Rev.2.00 Aug 07, 2006 page 5 of 6