FS20KM-6_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS20KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
300
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
0.20
0.26
Ω
—
2.0
2.6
V
8.5
13.0
—
S
—
1400
—
pF
—
280
—
pF
—
55
—
pF
—
25
—
ns
—
50
—
ns
—
150
—
ns
—
65
—
ns
—
1.5
2.0
V
—
—
3.13 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
PD = 40W
50
VGS = 20V
10V
40
TC = 25°C
Pulse Test
7V
30
6V
20
5V
10
4V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
10²
7
5
tw=10µs
3
2
100µs
10¹
7
5
1ms
3
2
10ms
10⁰
7
5
3
2
TC = 25°C
Single Pulse
10^–1
DC
2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³ 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
PD=
(TYPICAL)
40W VGS=20V
20
10V
6V
5.5V
16
TC = 25°C
Pulse Test
12
5V
8
4.5V
4
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999