FS10KMJ-3 Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
ID = 10A
8
VDS = 50V
6
80V
4
100V
2
0
0
10 20 30 40 50
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS10KMJ-3
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
12
TC = 125°C
8
4
75°C
25°C
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 ^{VGS = 10V}
5
4
ID = 1/2ID
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10¹
7 D = 1.0
5
3 ^0.5
2
0.2
10⁰
7
0.1
5
3
2
10^–1
7
5
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2
10^–42 3
5710^–32 3
5710^–22 3
5710^–12 3
5 7 10⁰
23
5 7 10¹
23
5 7 10²
PULSE WIDTH tw (s)
Feb.1999