BCR16PM-12L Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Medium Power Use

BCR16PM-12L
Holding Current vs.
Junction Temperature
10³
7
Typical Example
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60–40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Commutation Characteristics
7
5 ^{Typical Example Main Voltage}
Time
Tj = 125°C
(dv/dt)c
VD
3 ^IT ^{= 4A}
2 ^{τ = 500µs}
VD = 200V
Main Current
IT
(di/dt)c
τ _Time
f = 3Hz
10¹
7
I Quadrant
5 Minimum
Characteristics
3 ^Value
2
10⁰
III Quadrant
7
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Rev.2.00, Nov.09.2004, page 5 of 7
Latching Current vs.
Junction Temperature
10³
7
5
3
2
Distribution _{T2+, G–}
Typical Example
10²
7
5
3
2
10¹
7
5
3
2
TT22^+–,,
G+
G–
Typical Example
10⁰
–40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
Tj = 125°C
120
100
III Quadrant
80
60
40
I Quadrant
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
10³
7
Typical Example
5
IFGT I
4
3
IRGT I
IRGT III
2
10²
7
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
Gate Current Pulse Width (µs)