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| BCR08DS-14A_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 700V-0.8A-Triac Low Power Use | |||
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BCR08DS-14A
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
Tj = 125°C
120
100
80
60
I Quadrant
40
III Quadrant
20
0
100
101
102
103
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
IRGT III
Typical Example
IRGT I
102
IFGT I
IFGT III
101100
101
102
Gate Current Pulse Width (μs)
Preliminary
Commutation Characteristics (Tj=125°C)
101
Typical Example
Conditions
VD = 200V
IT = 1A
Ï = 500μs
Tj = 125°C
III Quadrant
100
I Quadrant
Minimum
Characteristics
Value
10â1
10â1
100
101
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
A
V
330Ω
Test Procedure I
6Ω
6V
A
V
330Ω
Test Procedure II
6Ω
6V
A
V
330Ω
Test Procedure III
6V
A
V
330Ω
Test Procedure IV
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
Page 5 of 7
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